Abbas b NOORI
Kirkuk technical institute Northern technical university & Iraq, Kirkuk
DOI : https://doi.org/10.47191/ijmra/v7-i03-46Google Scholar Download Pdf
ABSTRACT:
The text provides a description of the characteristics of several NMOS and CMOS circuit approaches, as well as an explanation of the limitations associated with each technology. Next, the CMOS domino circuit, a novel form of circuit, is explained. This entails interconnecting dynamic CMOS gates in a manner that enables the activation of all gates in the circuit simultaneously using a single clock edge. Consequently, there is no need for intricate clocking methods, allowing the dynamic gate to operate at its maximum speed. This circuit features a basic mode voltage-controlled oscillator operating at 135 GHz in 80-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR, a 405 GHz push-push voltage controller in 38-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR with an on-chip patch antenna, a 128 GHz Schottky diode frequency doubler, a 170 GHz Schottky diode detector, a 600 GHz plasma wave detector in 122-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR and a 40 GHz phase-locked loop with a frequency doubled output at 110 GHz. Given this and the trends in performance of n METAL OXIDE SEMICONDUCTOR transistors and Schottky diodes produced in complementary metal-oxide semiconductors, we lay out a plan for terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR systems and circuits, highlighting critical challenges that need to be addressed. With the advent of terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR
KEYWORDS:Schottky diode, voltage controller oscillator.cmos,nmos
REFERENCES1) Radamson, H. H., Zhu, H., Wu, Z., He, X., Lin, H., Liu, J., ... & Wang, G. (2020). State of the art and future perspectives in advanced COMPLEMENTARY METAL OXIDE SEMICONDUCTOR technology. Nanomaterials, 10(8), 1555.
2) Ohta, J. (2020). Smart COMPLEMENTARY METAL OXIDE SEMICONDUCTOR image sensors and applications. CRC press.
3) Daniels, R., & Burgess, R. (1971, February). The electronic wristwatch: an application for si-gate Complementary metal oxide semiconductor ics. In 1971 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Vol. 14, pp. 62-63). IEEE.
4) Burgess, R. R., & Daniels, R. G. (1970, October). Silicon gate COMPLEMENTARY METAL OXIDE SEMICONDUCTOR integrated circuits. In 1970 International Electron Devices Meeting (pp. 112-112). IEEE.
5) Bota, S. A., Montané, E., Carmona, M., Marco, S., & Samitier, J. (1970). Parameter extraction scheme for silicon pressure sensors in standard COMPLEMENTARY METAL OXIDE SEMICONDUCTOR technology. WIT Transactions on The Built Environment, 34.
6) Cricchi, J. R., & Barbe, D. F. (1971). Compensation of radiation effects by charge transport in Metal‐Nitride‐Oxide‐Semiconductor structures. Applied physics letters, 19(3), 49-51.
7) Pinto, R. M., Gund, V., Dias, R. A., Nagaraja, K. K., & Vinayakumar, K. B. (2022). COMPLEMENTARY METAL OXIDE SEMICONDUCTOR -Integrated aluminum nitride MEMS: A review. Journal of Microelectromechanical Systems, 31(4), 500-523.
8) Chun, A. C. C., Ramiah, H., & Mekhilef, S. (2022). Wide power dynamic range COMPLEMENTARY METAL OXIDE SEMICONDUCTOR RF-DC rectifier for RF energy harvesting system: A review. IEEE Access, 10, 23948-23963.
9) Zhu, Y., Mao, H., Zhu, Y., Wang, X., Fu, C., Ke, S., ... & Wan, Q. (2023). COMPLEMENTARY METAL OXIDE SEMICONDUCTOR - compatible neuromorphic devices for neuromorphic perception and computing: a review. International Journal of Extreme Manufacturing.
10) Jung, H. S., Jung, W. B., Wang, J., Abbott, J., Horgan, A., Fournier, M., ... & Ham, D. (2022). COMPLEMENTARY METAL OXIDE SEMICONDUCTOR electrochemical pH localizer-imager. Science advances, 8(30), eabm6815.
11) Ruffino, A., Yang, T. Y., Michniewicz, J., Peng, Y., Charbon, E., & Gonzalez-Zalba, M. F. (2022). A cryo- COMPLEMENTARY METAL OXIDE SEMICONDUCTOR chip that integrates silicon quantum dots and multiplexed dispersive readout electronics. Nature Electronics, 5(1), 53-59.
12) Kim, M. K., Kim, I. J., & Lee, J. S. (2022). COMPLEMENTARY METAL OXIDE SEMICONDUCTOR -compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks. Science Advances, 8(14), eabm8537.
13) Rawat, U., Anderson, J. D., & Weinstein, D. (2022). Design and applications of integrated transducers in commercial COMPLEMENTARY METAL OXIDE SEMICONDUCTOR technology. Frontiers in Mechanical Engineering, 8, 902421.
14) Pendurthi, R., Jayachandran, D., Kozhakhmetov, A., Trainor, N., Robinson, J. A., Redwing, J. M., & Das, S. (2022). Heterogeneous integration of atomically thin semiconductors for non‐von Neumann COMPLEMENTARY METAL OXIDE SEMICONDUCTOR. Small, 18(33), 2202590.
Volume 07 Issue 03 March 2024
There is an Open Access article, distributed under the term of the Creative Commons Attribution – Non Commercial 4.0 International (CC BY-NC 4.0) (https://creativecommons.org/licenses/by-nc/4.0/), which permits remixing, adapting and building upon the work for non-commercial use, provided the original work is properly cited.
Our Services and Policies
Authors should prepare their manuscripts according to the instructions given in the authors' guidelines. Manuscripts which do not conform to the format and style of the Journal may be returned to the authors for revision or rejected.
The Journal reserves the right to make any further formal changes and language corrections necessary in a manuscript accepted for publication so that it conforms to the formatting requirements of the Journal.
International Journal of Multidisciplinary Research and Analysis will publish 12 monthly online issues per year,IJMRA publishes articles as soon as the final copy-edited version is approved. IJMRA publishes articles and review papers of all subjects area.
Open access is a mechanism by which research outputs are distributed online, Hybrid open access journals, contain a mixture of open access articles and closed access articles.
International Journal of Multidisciplinary Research and Analysis initiate a call for research paper for Volume 07 Issue 11 (November 2024).
PUBLICATION DATES:
1) Last Date of Submission : 26 November 2024 .
2) Article published within a week.
3) Submit Article : editor@ijmra.in or Online
Why with us
1 : IJMRA only accepts original and high quality research and technical papers.
2 : Paper will publish immediately in current issue after registration.
3 : Authors can download their full papers at any time with digital certificate.
The Editors reserve the right to reject papers without sending them out for review.
Authors should prepare their manuscripts according to the instructions given in the authors' guidelines. Manuscripts which do not conform to the format and style of the Journal may be returned to the authors for revision or rejected. The Journal reserves the right to make any further formal changes and language corrections necessary in a manuscript accepted for publication so that it conforms to the formatting requirements of the Journal.